Castellated superjunction transistors

ABSTRACT

A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

TECHNICAL FIELD

The present disclosure relates generally to transistors, and moreparticularly to castellated superjunction transistors.

BACKGROUND

When a field-effect transistor (FET) is operated at high voltage, peakfields typically concentrate at the drain edge of the gate. The regionat the drain edge of the gate is the region where electrical breakdownof the FET typically occurs. Strategies for increasing breakdown voltagetypically focus on spreading the field out across a larger region, thusreducing the peak electric field. For example, a field plate structureis a typical strategy for increasing breakdown voltage in lateraldevices. However, field plates introduce a large capacitance penaltywhich limits their usefulness for millimeter wave (mmW) applications.

The onset of electrical breakdown in a semiconductor is a function ofthe charge density and thus conductivity of that semiconductor, creatinga trade-off between higher resistance material and higher breakdownvoltage which can be predicted from intrinsic material properties. Onehighly successful strategy of circumvent this tradeoff is to use asuperjunction, in which a charge balancing effect from mutual depletionof interspersed n-type and p-type doped regions allows the device tosustain a higher nominal breakdown without increasing its resistivity.Additionally, when high power density is dissipated within a FET, thispower is converted into thermal heat, which degrades charge mobility andoverall FET performance. Peak temperature typically occurs near thedrain edge of the channel underneath the gate. The use of thermaldissipation layers above the device or more thermally conductivesubstrates below the device have been proposed to enhance lateral heatdissipation to mitigate degradation of FET performance.

SUMMARY

In one example, a transistor is provided that comprises a source regionoverlying a base structure, a drain region overlying the base structure,and a block of semiconducting material overlying the base structure andbeing disposed between the source region and the drain region. The blockof semiconducting material comprises a gate controlled region adjacentthe source region, and a drain access region disposed between the gatecontrolled region and the drain region. The drain access region isformed of a plurality of semiconducting material ridges spaced apartfrom one another by non-channel trench openings, wherein at least aportion of the non-channel trench openings being filled with a dopedmaterial to provide a depletion region to improve breakdown voltage ofthe transistor.

In another example, a super-lattice castellated field effect transistor(SLCFET) is provided. The SLCFET comprises a plurality of multichannelridges residing over the base structure with each of the plurality ofmultichannel ridges comprising a plurality of heterostructures that eachform a portion of a parallel channel of the multichannel ridges with theplurality of multichannel ridges being spaced apart from one another bynon-channel trench openings. The SLCFET further comprises a sourceregion that overlies the base structure and is coupled with a first endof the plurality of multichannel ridges, a drain region that overliesthe base structure and is coupled with a second end of the plurality ofmultichannel ridges, and a gate barrier formed from the plurality ofheterostructures that runs transverse to the plurality of multichannelridges and separates the non-channel trench openings into drain-sidenon-channel trench openings and gate-controlled non-channel trenchopenings. The SLCFET further comprises a gate contact that wraps aroundand substantially surrounds the top and sides of each the plurality ofmultichannel ridges along at least a portion of its depth, filling thegate-controlled non-channel trench openings, and a doped semiconductingmaterial disposed in the drain-side non-channel trench openings.

In yet another example, a method is provided of forming a transistor.The method comprises forming a superlattice structure having a pluralityof heterostructures over a base structure and etching openings in thesuperlattice structure to form a plurality of multichannel ridges spacedapart from one another by non-channel trench openings. Each of theplurality of multichannel ridges are formed from a plurality ofheterostructures and each having sidewalls, and a gate barrier formedfrom the plurality of heterostructures that runs transverse to theplurality of multichannel ridges and separates the non-channel trenchopenings into drain-side non-channel trench openings and gate-controllednon-channel trench openings. The method further comprises filling thedrain-side non-channel trench openings with a doped semiconductingmaterial, and forming a gate contact that wraps around and substantiallysurrounds the top and sides of each the plurality of multichannel ridgesalong at least a portion of its depth, filling the gate-controllednon-channel trench openings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a top plan view of an example superjunctionsuper-lattice castellated gate field-effect-transistor (SLCFET).

FIG. 2 illustrates a partial cross-sectional view of the examplesuperjunction SLCFET device of FIG. 1 along the lines 2-2.

FIG. 3 illustrates a partial cross-sectional view of the examplesuperjunction SLCFET device of FIG. 1 along the lines 3-3.

FIG. 4 illustrates an example cross-sectional view of a superjunctionSLCFET early in the manufacturing process after formation of a mask overa superlattice structure and while undergoing an etch process.

FIG. 5 illustrates an example top plan view of the superjunction SLCFETof FIG. 4 after undergoing the etch process of FIG. 4.

FIG. 6 illustrates an example cross-sectional view of the superjunctionSLCFET of FIG. 4 after undergoing the etch process of FIG. 4.

FIG. 7 illustrates an example cross-sectional view of the superjunctionSLCFET device of FIG. 6 after deposition of a dielectric material layer.

FIG. 8 illustrates an example cross-sectional view of the superjunctionSLCFET device of FIG. 7 after formation of a mask and while undergoingan etch process.

FIG. 9 illustrates an example cross-sectional view of the superjunctionSLCFET device of FIG. 8 after undergoing the etch process of FIG. 8.

FIG. 10 illustrates an example cross-sectional view of the superjunctionSLCFET device of FIG. 9 after a material fill or regrowth process toform source and drain regions.

FIG. 11 illustrates an example cross-sectional view of the superjunctionSLCFET device of FIG. 10 after a material fill process to filldrain-side non-channel openings with a doped material.

FIG. 12 illustrates top plan view of the superjunction SLCFET device ofFIG. 10 after the material fill process to fill drain-side non-channelopenings with a doped material.

FIG. 13 illustrates a cross-sectional view of the structure of FIG. 11after formation of a source contact, a drain contact and a castellatedgate contact.

FIG. 14 illustrates a top plan view of an example transistor.

FIG. 15 illustrates a partial cross-sectional view of the exampletransistor of FIG. 14 along the lines 15-15.

DETAILED DESCRIPTION

The present disclosure is related to a transistor device that employs asuperjunction. In one example, the superjunction is built by filling innon-channel trench openings in a semiconductor material on the drainside of the device with a suitable material which is doped in theopposite polarity as the current-carrying ridges. For example, aboron-doped (p-type) diamond or Mg or Ca-doped (p-type) GaN material tocomplement ridges in which electrons are the dominant charge carriers(n-type material). This forms a depletion region between the p-typedoped material and the n-type ridges in the drain access region of thedevice. The castellated superjunction can use a charge balancing conceptin which a growing depletion region helps to create a constant electricfield distribution. The castellated superjunction also functions similarto a field plate structure, for increasing breakdown voltage in thedevices. However, field plates introduce a large capacitance penaltywhich limits their usefulness for mmW applications. An active fieldplate composed of a doped material such as p-diamond, however, depletesat the interface. This interface depletion region actively grows withincreasing drain bias resulting in a lower capacitance penalty. Thetransistor can be a variety of different types of transistor such as aHigh-electron mobility transistor (HEMT), a metal-oxide-semiconductorFET (MOSFET), a finFET, a single heterostructure transistor, or asuperlattice heterostructure transistor.

In one example, the superjunction is composed of alternating trenchregions filled with doped semiconductor material and castellatedsemiconductor structures that are formed from a single block ofsemiconductor material. Each castellated semiconductor structure forms amultichannel ridge that provides a portion of the drain access region ofthe FET along with the unfilled trench regions. A plurality ofcastellated semiconductor ridges and doped semiconductor filled trenchescollectively form a superjunction in the drain access region of the FET.The trench openings, referred to as non-channel trench openings, areinterleaved between the multichannel ridges of the superlattice-basedFET, and filled with a doped semiconductor material, such as boron-dopeddiamond or Ca- or Mg-doped GaN. The superjunction is located between thegate and drain of the device to facilitate improved breakdown voltage. Aplanar gate controls the channel formed in the single block of materialbetween the source region and the drain region that is adjacent thedrain access region.

In one example, the transistor is a superjunction superlatticecastellated field effect transistor (SLCFET) device. In this example,the superjunction is composed of alternating trench regions filled withdoped semiconductor material and castellated AlGaN/GaN superlatticestructures that are formed of stacked n-type 2DEGs. Each superlatticestructure forms a multichannel ridge that provides a castellated gatecontrolled region and a portion of the drain access region of the FET.The trench openings, referred to as non-channel trench openings, areinterleaved between the multichannel ridges of the superlattice-basedFET in the drain access region an filled with a doped semiconductormaterial, such as p-doped boron or diamond. The superjunction is locatedbetween the gate controlled region and drain of a SLCFET device tofacilitate improved breakdown voltage. A castellated gate controls thechannel formed in the castellated AlGaN/GaN superlattice structuresbetween the source region and the drain region that is adjacent thedrain access region.

In one example of a superjunction SLCFET device, the superjunction isbuilt by filling in non-channel trench openings on the drain side of thedevice with a suitable p-doped material, such as boron doped diamond orMg- or Ca-doped GaN that forms a depletion region between the p-typedoped material and the castellated AlGaN/GaN superlattice structuresthat formed the conducting drain ridges of the device. A dielectricbarrier layer may be used between the p-type doped material and the2DEGs to prevent leakage.

In a gate-controlled region of the superjunction SLCFET device, in orderto deplete out and pinch off the superlattice channels, a series offin-like structures are etched into the superlattice, forming themultichannel ridges and the non-channel trench openings. A castellatedgate contact on this structure allows the gate electric field to beapplied from the sidewalls of the multichannel ridges, permittingdepletion of the 2DEGs in the superlattice simultaneously from theiredges. The catellated gate contact wraps around and substantiallysurrounds the top and sides of each of the plurality of multichannelridges allowing the capability to turn the device off by fully depletingthe 2DEGs from the sidewalls of the castellations.

FIGS. 1-3 illustrates different views of a SLCFET device with asuperjunction, while FIGS. 4-13 illustrate a methodology for forming theSLCFET device of FIGS. 1-3. FIGS. 14-15 illustrate different views of aplanar device with a superjunction.

FIG. 1 illustrates a top plan view of an example of a superjunctionSLCFET device 10. FIG. 2 illustrates a partial cross-sectional view ofan example of a portion of a superjunction of the superjunction SLCFETdevice 10 of FIG. 1 along the lines 2-2. FIG. 3 illustrates across-sectional view of the superjunction SLCFET device 10 of FIG. 1along the lines 3-3. The top plan view of FIG. 1 is shown withoutdielectric layer 25 to facilitate viewability of the underlying layers,where the dielectric layer 25 is illustrated in FIG. 2 and FIG. 3.

Referring to FIGS. 1-3, the superjunction SLCFET device 10 includes aplurality of multichannel drain ridge 22 that extend between a gateinterface 38 and a drain interface 40. Each of the plurality ofmultichannel drain ridges 22 include a plurality of channels formed froma plurality of heterostructures with each heterostructure being formedfrom an AlGaN layer overlying a GaN layer. A given heterostructure formsa portion of the castellated drain of the device 10 with the pluralityof multichannel drain ridges 22 collectively forming the entirecastellated drain of the device 10. The plurality of multichannel drainridges 22 are separated from one another by drain-side non-channelopenings 24 located in a superjunction region 37 located on a drain sideof the device 10. A source interface 36 and a gate interface 38 definesthe gate region 35, while the gate interface 38 and a drain interface 40defines the superjunction region 37. That is the source interface 36connects the source region 32 and the gate region 35, the gate interface38 connects the gate region 35 and the superjunction region 37, and thedrain interface 40 connects the drain region 34 and the superjunctionregion 37.

Each of the source interface 36, the gate interface 38, and the draininterface 40 are also formed from the plurality of heterostructures thatincludes stacks of an AlGaN layer overlying a GaN layer with a portionbeing part of the multichannel drain ridge 22 and a portion acting asinterfaces to connect the respective regions and respective non-channeltrench openings. As illustrated in the cross-section view of FIG. 2 andFIG. 3, each of the drain-side non-channel trench openings 24 are filledwith a doped semiconducting material. In one example, the dopedsemiconducting material is a p-doped material, and in another example,the p-doped material is a boron doped diamond material or a Mg- orCa-doped GaN material. A top portion 42 of the doped material shortseach of the doped material filling the non-channel trench openings inthe superjunction region 37 to one another. The doped material fillingthe non-channel trench openings 24 and 42 and the plurality ofmultichannel drain ridges 22 together form a superjunction 44.

Referring to FIGS. 1-3, the superjunction SLCFET device 10 includes aplurality of multichannel gate ridges 21 that extend between a gateinterface 38 and a source interface 36. Each of the plurality ofmultichannel gate ridges 21 include a plurality of channels formed froma plurality of heterostructures with each heterostructure being formedfrom an AlGaN layer overlying a GaN layer. A given heterostructure formsa portion of the channel of the device 10 with the plurality ofmultichannel gate ridges 21 collectively forming the entire channel ofthe device 10. The plurality of multichannel gate ridges 21 areseparated from one another by gate-controlled non-channel trenchopenings located in a gate region 35 of the device 10. A castellatedgate contact 26 extends over the multichannel gate ridges 21 and throughgate-controlled non-channel trench openings 27 in the gate region 35 ofthe device 10. The superjunction SLCFET device 10 is in a normal “ON”state when no voltage is applied to the castellated gate contact 26, andcan be turned to an “OFF” state by applying a negative voltage to thecastellated gate contact 26, which in turn controls whether or notcurrent flows through the multichannel gate ridges 21 between the sourceregion 32 and the drain region 34 when a bias is applied between thesource region 32 and the drain region 34. The source region 32 iscoupled to the plurality of multichannel gate ridges 21 through thesource interface 36, and the drain region 34 is coupled to the pluralityof multichannel drain ridges 22 through the drain interface 40. A sourcecontact 28 resides on top of the source region 32 and a drain contact 30resides on top of the drain region 34.

As illustrated in FIG. 2, each multichannel drain ridge 22 includes aplurality of heterostructures 31 that overly a base 12 (base structure).Three layers may be used to construct the base 12 including a substratelayer 14, a lattice matching material layer 16, and a buffer layer 18.The substrate layer 14 can be formed of Silicon Carbide (SiC), thelattice matching material layer 16 can be formed of Aluminum GaliumNitride layer (AlGaN), and the buffer layer 18 can be formed of anundoped GaN drift region. In one example implementation, an AlGaN layer35 overlying a GaN layer 33 form a given layer of the heterostructure31. Each heterostructure forms a portion of a channel of themultichannel gate formed from the plurality of multichannel drain ridges22 of the superjunction SLCFET device 10. The dielectric layer 25 (FIG.2), for example, of silicon nitride (SiN) can overlay the superjunctionSLCFET device 10, and be disposed between the plurality of multichanneldrain ridges 22 and the doped material filling the non-channel trenchopenings 24 and 42 as well as between the plurality of multichannel gateridges 21 and castellated gate contact 26.

The multichannel drain ridges 22 and multichannel gate ridges 21 cancomprise a plurality of heterostructures that may number between 2 andK, where K is defined as the maximum number of heterostructures that canbe grown, deposited or otherwise formed on each other without crackingor other mechanical failure in the layers or 2DEG channels. One ofordinary skill in the art appreciates that several values including thevalue of K, relative positions of AlGaN and GaN may be reversed, othersuitable materials may be used, and other parameters, options, and thelike that are desirable may be used to implement the multichannel drainridges 22 and multichannel gate ridges 21. By stacking a plurality ofthese two-material heterostructures, and with the addition ofappropriate doping in the layers to maintain the presence of the 2DEG or2DHG channels when stacking a plurality of heterostructure layers, thesheets of charge are able to act in parallel, allowing for greatercurrent flow through each heterostructure.

Carriers, which form a 2DEG in a standard channel of AlGaN/GaN, may bespontaneously generated and maintained due to piezoelectric andspontaneous polarization, or introduced with doping. For example, theAlGaN barrier is strained by virtue of its epitaxial relationship withthe GaN channel and since these materials are piezoelectric, freecarriers are generated in the channel. The strain state of barrier andchannel layers used, in some examples, may control the carrierconcentration in the AlGaN/GaN heterostructures. One of ordinary skillin the art understands that precise control of composition, thickness,and the ordering of the AlGaN and GaN layers provides for the precisecontrol of the production of the superjunction SLCFET device 10. Anepitaxial scheme and device fabrication method may exploit thisphenomenon.

In various example manufacturing methods and techniques of producingvarious superjunction SLCFETs and other high voltage FETs the variousexample methods disclosed herein can provide for optimization of one ormore device parameters such as, for example, the breakdown voltage, apinch-off voltage, linearity and other device parameters. For example,the superjunction SLCFET device 10 can be a used for a variety ofapplications such as time delay units, low loss phase shifters andattenuators, switch matrices, T/R switches, circulator replacements oras amplifiers, and the like. Though such multi-channel devices offer lowon-state resistance, power consumption and related voltages can be veryhigh and sometimes high enough to cause these devices to fail whenoperating at high voltages and high power.

FIGS. 4-13, illustrate an example method of fabrication in connectionwith formation of the example superjunction SLCFET device illustrated inFIGS. 1-3. FIG. 4 illustrates a cross-sectional view of a superjunctionSLCFET device in its early stages of fabrication starting with a basestructure 50. As discussed earlier, three layers may be used toconstruct the base structure 50 including a substrate layer 52, alattice matching material layer 54, and a buffer layer 56.

A superlattice heterostructure 58 has been fabricated across the entireupper surface of the buffer layer 56 resulting in the structure of FIG.4. In one example implementation, each heterostructure is formed from anAlGaN layer overlying a GaN layer. Example methods of fabricationinvolve sequential growth of multichannel profiles in a monolithicepitaxial scheme known by those of ordinary skill in the art. Bysequentially growing the epitaxial multichannel layers that will laterbecome devices and appropriate doping, all devices fabricated from thisstructure will benefit from the inherently high quality materialproperties, atomically flat interfaces and compositional controlassociated with epitaxial growth.

The epitaxial growth of different materials upon each other mayoptionally be enhanced with appropriate deposition technique(s) untilthe layered heterostructures illustrated in FIG. 4 has been produced.Any suitable technique for depositing each layer can be employed such asmetal organic chemical vapor deposition (MOVCD), molecular beam epitaxy(MBE), Low Pressure Chemical Vapor Deposition (LPCVD), Plasma EnhancedChemical Vapor Deposition (PECVD), High Density Chemical Plasma VaporDeposition (HDPCVD), Atomic Layer Deposition (ALD), physical vapordeposition or high density plasma chemical vapor deposition (HDPCVD)techniques, or other suitable deposition techniques.

An etch mask 60 has been formed overlying the superlatticeheterostructure 58. The etch mask 60 can be formed by depositing,patterning and developing a photoresist material layer over thesuperlattice heterostructure 58. The etch mask 60 specifies (unblocks)areas 61 where openings 63 and 65 (FIG. 5) are to be formed.Additionally, FIG. 4 illustrates the structure undergoing an etchprocess 200 to form the openings 63 and 65. The etch process 200employing the etch mask 60 is used to form a plurality of multichanneldrain ridges 64, multichannel gate ridges 68 and non-channel trenchopenings 63 and 65 from the superlattice heterostructure 58, asillustrated in the plan view of FIG. 5. The superlattice heterostructureremains in source area 62 and drain area 70. The etch mask 60 can thenbe removed to provide the resultant structure illustrated in the topplan view of FIG. 5 and the cross-sectional view of FIG. 6 along thelines 6-6 of FIG. 5. In particular, the etch process formsgate-controlled non-channel trench openings 63 located in a gate region67 and drain-side non-channel trench openings 65 located in asuperjunction region 69. A gate interface 66 remains to connect the gateregion 67 and superjunction region 69 and separate the gate-controllednon-channel trench openings 63 and the drain-side non-channel trenchopenings 65.

Techniques for forming alternating multichannel ridges and non-channeltrench openings are disclosed in commonly owned U.S. Pat. No. 9,419,120,entitled, “Multichannel Devices with Improved Performances and Methodsof Making the Same”, and commonly owned U.S. Pat. No. 9,773,897,entitled, “Multichannel Devices with Gate Structures to IncreaseBreakdown Voltage”, both of which are herein incorporated by referencein their entirety herein.

Next, a gate dielectric deposition process is performed to cover thedevice with a dielectric material layer 72 to provide the resultantstructure of FIG. 7. The dielectric material layer 72 prevents leakagebetween the gate and the 2DEG layers formed in the superlattice. Thedielectric material layer 72 also eliminates leakage between the dopedmaterial to be deposited in the drain-side non-channel trench openings65 and the 2DEGs in the multichannel drain ridges 64.

FIG. 8 illustrates formation of an etch mask 74 with patterned openings76 and 78 over the structure of FIG. 7. Additionally, FIG. 8 illustratesthe structure undergoing an etch process 210 to form the openings 80 and82 for depositing or regrowing heavily doped ohmic contact material inthe openings 80 and 82. The resultant structure is illustrated in FIG. 9after the etch process 210 has been completed, and the etch maskremoved. Next, the structure of FIG. 9 undergoes a deposition orregrowth process to fill the openings 80 and 82 with heavily dopedmaterial such as n+ doped Gallium Nitride (GaN) to form source region 84and drain region 86, and provide the resultant structure of FIG. 10. Asource interface 76 remains that connects the source-side non-channeltrench openings 63 from the source region, and a drain interface 78connects the drain-side non-channel trench openings 65 from the drainregion 86.

Next, the structure of FIG. 10 undergoes a doped semiconducting materialfill process to fill drain-side non-channel trench openings 65 locatedin a superjunction region 69. The doped semiconducting material can be ap-type doped material. The p-type doped material can be a boron dopeddiamond material or a Mg- or Ca-doped GaN material. A depletion regionforms during device operation between the doped semiconducting materialand the castellated AlGaN/GaN superlattice structures that form thecastellated drain access region of the device. Any suitable techniquefor depositing the doped material can be employed such as metal organicchemical vapor deposition (MOVCD), molecular beam epitaxy (MBE), LowPressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced ChemicalVapor Deposition (PECVD), High Density Chemical Plasma Vapor Deposition(HDPCVD), Atomic Layer Deposition (ALD), physical vapor deposition orhigh density plasma chemical vapor deposition (HDPCVD) techniques, orother suitable deposition techniques. The resultant structure isillustrated in the cross-sectional view of FIG. 11, and the top planview of FIG. 12 showing doped material filled drain-side non-channeltrench openings 88.

FIG. 13 illustrates the structure of FIG. 12 after a contact formationprocess to form a source contact 90 on top of the n+ regrowth sourceregion 84 and a drain contact 94 on top of the n+ growth drain region86. Concurrently, previously or subsequently, a castellated gate contact92 is formed over the multichannel ridges 64 and through the source-sidenon-channel openings 63 in the gate region 67 of the device.Photodeposition patterning and metallization processes can be employedto form the source contact 90, the drain contact 94, and the castellatedgate contact 92. A plan view of the resultant structure of FIG. 13 wouldbe substantially similar to the device illustrated in FIG. 1. Apassivation layer (not shown) (e.g., diamond layer) can then be formedover the top of the structure to protect the device from contaminants.

FIG. 14 illustrates a top plan view of an example of a transistor device100 with a block of semiconducting material disposed between a sourceregion 132 and a drain region 134. The block of semiconducting materialcan be formed of one layer, a number of layers, heterostructure or asuperheterostructure. The transistor device 100 can be a MOSFET, afinFET, a HEMT, a single heterojunction device, a multipleheterojunction transistor device, or any of a variety of other fieldeffect transistor architectures. FIG. 15 illustrates a partialcross-sectional view of an example of a portion of the superjunction FETdevice 100 of FIG. 1 along the lines 15-15.

Referring to FIG. 14-15, the FET device 100 includes the source region132 overlying a base structure 112, the drain region 134 overlying thebase structure 112, and a block of semiconducting material 136 overlyingthe base structure 112 and being disposed between the source region 132and the drain region 134. Three layers may be used to construct the base112 including a substrate layer 114, a lattice matching material layer116, and a buffer layer 118. The block of semiconducting materialcomprises a gate controlled region 137 adjacent the source region 132,and a drain access region 139 disposed between the gate controlledregion 137 and the drain region 134. The drain access region is formedof a plurality of semiconducting material ridges 122 spaced apart fromone another by non-channel trench openings 124, wherein at least aportion of the non-channel trench openings 124 are filled with a dopedmaterial. A top portion 142 of the doped material shorts each of thedoped material filled non-channel trench openings 124 in thesuperjunction region 137 to one another. Together, the doped material124 and 142 and the semiconducting material ridges 122 form asuperjunction 144. A source contact 128 resides on top of the sourceregion 132 and a drain contact 130 resides on top of the drain region134. A planar gate contact 126 resides over the block of semiconductormaterial in the gate controlled region to control the current flowingbetween the source contact 128 and the drain contact 130.

What has been described above are examples. It is, of course, notpossible to describe every conceivable combination of components ormethodologies, but one of ordinary skill in the art will recognize thatmany further combinations and permutations are possible. Accordingly,the disclosure is intended to embrace all such alterations,modifications, and variations that fall within the scope of thisapplication, including the appended claims. As used herein, the term“includes” means includes but not limited to, the term “including” meansincluding but not limited to. The term “based on” means based at leastin part on. Additionally, where the disclosure or claims recite “a,”“an,” “a first,” or “another” element, or the equivalent thereof, itshould be interpreted to include one or more than one such element,neither requiring nor excluding two or more such elements.

1. A transistor comprising: a source region overlying a base structure;a drain region overlying the base structure; a block of semiconductingmaterial overlying the base structure and being disposed between thesource region and the drain region, the block of semiconducting materialcomprising; a gate controlled region adjacent the source region; and adrain access region disposed between the gate controlled region and thedrain region, the drain access region being formed of a plurality ofsemiconducting material ridges spaced apart from one another bynon-channel trench openings, wherein at least a portion of thenon-channel trench openings being filled with a doped material toprovide a depletion region to improve breakdown voltage of thetransistor.
 2. The transistor of claim 1, wherein the doped material isboron p-doped diamond.
 3. The transistor of claim 1, wherein the dopedmaterial is Mg- or Ca-doped GaN.
 4. The transistor of claim 1, furthercomprising a gate contact that extends over the gate controlled regionto control current flowing in the block of semiconductor materialbetween the source region and the drain region.
 5. The transistor ofclaim 1, further comprising a top portion of doped material that shortstogether the doped material in each non-channel trench opening tocollectively form a superjunction with the plurality of semiconductingmaterial ridges in the drain access region.
 6. The transistor of claim1, further comprising a source contact disposed over the source regionand a drain contact disposed over the drain region, wherein the sourceregion and the drain region are formed of n+ doped gallium nitride. 7.The transistor of claim 1, further comprising a diamond passivationlayer overlying the source region, the drain region, the gate contactand the drain access region.
 8. The transistor of claim 1, wherein thetransistor is a super-lattice castellated gate heterojunction fieldeffect transistor (SLCFET).
 9. The transistor of claim 8, wherein thegate controlled region is formed of semiconducting material ridgesspaced apart from one another by non-channel trench openings, and eachof the semiconductor material ridges are formed a plurality ofheterostructures that each form a portion of a parallel channel of thetransistor.
 10. The transistor of claim 9, further comprising a gatecontact that wraps around and substantially surrounds the top and sidesof each the semiconducting material ridges along at least a portion ofits depth in the gate controlled region.
 11. A super-lattice castellatedgate heterojunction field effect transistor (SLCFET) comprising: aplurality of multichannel gate ridges residing over the base structurewith each multichannel gate ridge comprising a plurality ofheterostructures that each form a portion of a parallel channel of themultichannel gate ridges, the plurality of multichannel gate ridgesbeing spaced apart from one another by gate-controlled non-channeltrench openings; a plurality of multichannel drain ridges residing overthe base structure with each multichannel drain ridge comprising aplurality of heterostructures that each form a portion of a parallelchannel of the multichannel drain ridges, the plurality of multichanneldrain ridges being spaced apart from one another by drain-sidenon-channel trench openings; a source region that overlies the basestructure and is coupled with a first end of the plurality ofmultichannel gate ridges; a drain region that overlies the basestructure and is coupled with a first end of the plurality ofmultichannel drain ridges; a gate interface formed from the plurality ofhetero structures that runs transverse to the plurality of multichannelridges, is coupled with a second end of the plurality of multichannelgate ridges and a second end of the plurality of multichannel drainridges, and separates the non-channel trench openings into drain-sidenon-channel trench openings and gate-controlled non-channel trenchopenings; a gate contact that wraps around and substantially surroundsthe top and sides of each the plurality of multichannel gate ridgesalong at least a portion of its depth and fills the gate-controllednon-channel trench openings; and a doped material disposed in thedrain-side non-channel trench openings.
 12. The SLCFET of claim 1,wherein each heterostructure is formed from an AlGaN layer and a GaNlayer, wherein the AlGaN layer is doped.
 13. The SLCFET of claim 1,wherein the doped material is boron doped diamond.
 14. The SLCFET ofclaim 1, wherein the doped material is Mg- or Ca-doped GaN.
 15. A methodof forming a transistor, the method comprising: forming a superlatticestructure having a plurality of heterostructures over a base structure;etching openings in the superlattice structure to form a plurality ofmultichannel gate ridges spaced apart from one another bygate-controlled non-channel trench openings, each of the plurality ofmultichannel gate ridges being formed from a plurality ofheterostructures and each having sidewalls, a plurality of multichanneldrain ridges spaced apart from one another by drain-side non-channeltrench openings, each of the plurality of multichannel drain ridgesbeing formed from a plurality of heterostructures and each havingsidewalls, and a gate interface formed from the plurality ofheterostructures that runs transverse to the plurality of multichannelgate ridges and multichannel drain ridges and separates the drain-sidenon-channel trench openings from the gate-controlled non-channel trenchopenings; filling the source-side non-channel trench openings with adoped semiconducting material; and forming a gate contact that wrapsaround and substantially surrounds the top and sides of each theplurality of multichannel ridges along at least a portion of its depth,filling the gate-controlled non-channel trench openings.
 16. The methodof claim 15, wherein each heterostructure is formed from an AlGaN layerand a GaN layer, wherein the AlGaN layer is doped.
 17. The method ofclaim 15, wherein the doped semiconducting material is boron dopeddiamond.
 18. The method of claim 15, wherein the doped semiconductingmaterial is Mg- or Ca-doped GaN.
 19. The method of claim 15, furthercomprising: etching a source opening on a source side of the pluralityof multichannel ridges and a drain opening on a drain side of theplurality of multichannel ridges; filling the source opening and drainopening with a doped material to form a drain region and a source regionwith the drain region being coupled with a first end of the plurality ofmultichannel ridges and the source region being coupled with a secondend of the plurality of multichannel ridge.
 20. The method of claim 19,further comprising forming a source contact disposed over the sourceregion and a drain contact disposed over the drain region, wherein thesource region and the drain region are formed of n+ doped GalliumNitride.